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Other articles related with "Schottky barrier diode"：
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128507 |
Qiming He(何启鸣), Weibing Hao(郝伟兵), Qiuyan Li(李秋艳), Zhao Han(韩照), Song He(贺松),Qi Liu(刘琦), Xuanze Zhou(周选择), Guangwei Xu(徐光伟), and Shibing Long(龙世兵) |
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β-Ga2O3 junction barrier Schottky diode with NiO p-well floating field rings |
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Chin. Phys. B
2023 Vol.32 (12): 128507-128507
[Abstract]
(101)
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[PDF 2945 KB]
(58)
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88101 |
Ying Zhu(朱盈), Wang Lin(林旺), Dong-Shuai Li(李东帅), Liu-An Li(李柳暗), Xian-Yi Lv(吕宪义), Qi-Liang Wang(王启亮), and Guang-Tian Zou(邹广田) |
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High performance trench diamond junction barrier Schottky diode with a sidewall-enhanced structure |
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Chin. Phys. B
2023 Vol.32 (8): 88101-088101
[Abstract]
(134)
[HTML 0 KB]
[PDF 1968 KB]
(105)
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17305 |
Xiaoyu Liu(刘晓宇), Yong Zhang(张勇), Haoran Wang(王皓冉), Haomiao Wei(魏浩淼),Jingtao Zhou(周静涛), Zhi Jin(金智), Yuehang Xu(徐跃杭), and Bo Yan(延波) |
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High frequency doubling efficiency THz GaAs Schottky barrier diode based on inverted trapezoidal epitaxial cross-section structure |
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Chin. Phys. B
2023 Vol.32 (1): 17305-017305
[Abstract]
(256)
[HTML 0 KB]
[PDF 3641 KB]
(83)
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108105 |
Wang Lin(林旺), Ting-Ting Wang(王婷婷), Qi-Liang Wang(王启亮), Xian-Yi Lv(吕宪义), Gen-Zhuang Li(李根壮), Liu-An Li(李柳暗), Jin-Ping Ao(敖金平), and Guang-Tian Zou(邹广田) |
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Design of vertical diamond Schottky barrier diode with junction terminal extension structure by using the n-Ga2O3/p-diamond heterojunction |
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Chin. Phys. B
2022 Vol.31 (10): 108105-108105
[Abstract]
(317)
[HTML 0 KB]
[PDF 1211 KB]
(99)
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57702 |
Qiliang Wang(王启亮), Tingting Wang(王婷婷), Taofei Pu(蒲涛飞), Shaoheng Cheng(成绍恒),Xiaobo Li(李小波), Liuan Li(李柳暗), and Jinping Ao(敖金平) |
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Hybrid-anode structure designed for a high-performance quasi-vertical GaN Schottky barrier diode |
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Chin. Phys. B
2022 Vol.31 (5): 57702-057702
[Abstract]
(325)
[HTML 0 KB]
[PDF 1087 KB]
(47)
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47302 |
Pei-Pei Ma(马培培), Jun Zheng(郑军), Ya-Bao Zhang(张亚宝), Xiang-Quan Liu(刘香全), Zhi Liu(刘智), Yu-Hua Zuo(左玉华), Chun-Lai Xue(薛春来), and Bu-Wen Cheng(成步文) |
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Lateral β-Ga2O3 Schottky barrier diode fabricated on (-201) single crystal substrate and its temperature-dependent current-voltage characteristics |
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Chin. Phys. B
2022 Vol.31 (4): 47302-047302
[Abstract]
(399)
[HTML 1 KB]
[PDF 884 KB]
(322)
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67305 |
Chun-Xu Su(苏春旭), Wei Wen(温暐), Wu-Xiong Fei(费武雄), Wei Mao(毛维), Jia-Jie Chen(陈佳杰), Wei-Hang Zhang(张苇杭), Sheng-Lei Zhao(赵胜雷), Jin-Cheng Zhang(张进成), and Yue Hao(郝跃) |
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Design and simulation of AlN-based vertical Schottky barrier diodes |
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Chin. Phys. B
2021 Vol.30 (6): 67305-067305
[Abstract]
(506)
[HTML 0 KB]
[PDF 879 KB]
(106)
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67302 |
Yang-Tong Yu(俞扬同), Xue-Qiang Xiang(向学强), Xuan-Ze Zhou(周选择), Kai Zhou(周凯), Guang-Wei Xu(徐光伟), Xiao-Long Zhao(赵晓龙), and Shi-Bing Long(龙世兵) |
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Device topological thermal management of β-Ga2O3 Schottky barrier diodes |
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Chin. Phys. B
2021 Vol.30 (6): 67302-067302
[Abstract]
(458)
[HTML 1 KB]
[PDF 1138 KB]
(221)
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56110 |
Wen-Si Ai(艾文思), Jie Liu(刘杰), Qian Feng(冯倩), Peng-Fei Zhai(翟鹏飞), Pei-Pei Hu(胡培培), Jian Zeng(曾健), Sheng-Xia Zhang(张胜霞), Zong-Zhen Li(李宗臻), Li Liu(刘丽), Xiao-Yu Yan(闫晓宇), and You-Mei Sun(孙友梅) |
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Degradation of β-Ga2O3 Schottky barrier diode under swift heavy ion irradiation |
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Chin. Phys. B
2021 Vol.30 (5): 56110-056110
[Abstract]
(550)
[HTML 1 KB]
[PDF 1008 KB]
(173)
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38101 |
Da-Ping Liu(刘大平), Xiao-Bo Li(李小波), Tao-Fei Pu(蒲涛飞), Liu-An Li(李柳暗), Shao-Heng Cheng(成绍恒), and Qi-Liang Wang(王启亮) |
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Vertical GaN Shottky barrier diode with thermally stable TiN anode |
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Chin. Phys. B
2021 Vol.30 (3): 38101-
[Abstract]
(433)
[HTML 1 KB]
[PDF 1698 KB]
(95)
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27301 |
Tao Fang(房涛), Ling-Qi Li(李灵琪), Guang-Rui Xia(夏光睿), and Hong-Yu Yu(于洪宇) |
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Modeling, simulations, and optimizations of gallium oxide on gallium-nitride Schottky barrier diodes |
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Chin. Phys. B
2021 Vol.30 (2): 27301-0
[Abstract]
(826)
[HTML 1 KB]
[PDF 600 KB]
(351)
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47305 |
Wei-Fan Wang(王伟凡), Jian-Feng Wang(王建峰), Yu-Min Zhang(张育民), Teng-Kun Li(李腾坤), Rui Xiong(熊瑞), Ke Xu(徐科) |
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Fabrication and characterization of vertical GaN Schottky barrier diodes with boron-implanted termination |
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Chin. Phys. B
2020 Vol.29 (4): 47305-047305
[Abstract]
(676)
[HTML 1 KB]
[PDF 1329 KB]
(185)
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17105 |
Zeng Liu(刘增), Pei-Gang Li(李培刚), Yu-Song Zhi(支钰崧), Xiao-Long Wang(王小龙), Xu-Long Chu(褚旭龙), Wei-Hua Tang(唐为华) |
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Review of gallium oxide based field-effect transistors and Schottky barrier diodes |
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Chin. Phys. B
2019 Vol.28 (1): 17105-017105
[Abstract]
(896)
[HTML 1 KB]
[PDF 5647 KB]
(809)
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127302 |
Hui Wang(王辉), Ling-Li Jiang(蒋苓利), Xin-Peng Lin(林新鹏), Si-Qi Lei(雷思琦), Hong-Yu Yu(于洪宇) |
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A simulation study of field plate termination in Ga2O3 Schottky barrier diodes |
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Chin. Phys. B
2018 Vol.27 (12): 127302-127302
[Abstract]
(624)
[HTML 1 KB]
[PDF 650 KB]
(177)
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97203 |
Yi-Dong Wang(王一栋), Jun Chen(陈俊) |
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Modeling capacitance–voltage characteristic of TiW/p-InP Schottky barrier diode |
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Chin. Phys. B
2018 Vol.27 (9): 97203-097203
[Abstract]
(576)
[HTML 1 KB]
[PDF 1187 KB]
(182)
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97303 |
Zhong Jian (钟健), Yao Yao (姚尧), Zheng Yue (郑越), Yang Fan (杨帆), Ni Yi-Qiang (倪毅强), He Zhi-Yuan (贺致远), Shen Zhen (沈震), Zhou Gui-Lin (周桂林), Zhou De-Qiu (周德秋), Wu Zhi-Sheng (吴志盛), Zhang Bai-Jun (张伯君), Liu Yang (刘扬) |
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Influence of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with recessed anode |
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Chin. Phys. B
2015 Vol.24 (9): 97303-097303
[Abstract]
(933)
[HTML 1 KB]
[PDF 601 KB]
(567)
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117306 |
E. Yağlıoğlu, Ö. Tüzün Özmen |
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F4-TCNQ concentration dependence of the current–voltage characteristics in the Au/P3HT:PCBM:F4-TCNQ/n-Si (MPS) Schottky barrier diode |
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Chin. Phys. B
2014 Vol.23 (11): 117306-117306
[Abstract]
(572)
[HTML 1 KB]
[PDF 367 KB]
(610)
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97308 |
Jiang Chao (蒋超), Lu Hai (陆海), Chen Dun-Jun (陈敦军), Ren Fang-Fang (任芳芳), Zhang Rong (张荣), Zheng You-Dou (郑有炓) |
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Breakdown characteristics of AlGaN/GaN Schottky barrier diodes fabricated on a silicon substrate |
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Chin. Phys. B
2014 Vol.23 (9): 97308-097308
[Abstract]
(735)
[HTML 1 KB]
[PDF 1081 KB]
(770)
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17303 |
Cao Lin(曹琳), Pu Hong-Bin(蒲红斌), Chen Zhi-Ming(陈治明), and Zang Yuan(臧源) |
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Analysis and simulation of a 4H-SiC semi-superjunction Schottky barrier diode for softer reverse-recovery |
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Chin. Phys. B
2012 Vol.21 (1): 17303-017303
[Abstract]
(1305)
[HTML 1 KB]
[PDF 260 KB]
(908)
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17103 |
Cao Zhi-Fang(曹芝芳), Lin Zhao-Jun(林兆军), LŰ Yuan-Jie(吕元杰), Luan Chong-Biao(栾崇彪), Yu Ying-Xia(于英霞), Chen Hong(陈弘), and Wang Zhan-Guo(王占国) |
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Determination of the series resistance under the Schottky contacts of AlGaN/AlN/GaN Schottky barrier diodes |
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Chin. Phys. B
2012 Vol.21 (1): 17103-017103
[Abstract]
(1352)
[HTML 1 KB]
[PDF 247 KB]
(1183)
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107304 |
Nan Ya-Gong(南雅公), Pu Hong-Bin(蒲红斌), Cao Lin(曹琳), and Ren Jie(任杰) |
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Study and optimal simulation of 4H–SiC floating junction Schottky barrier diodes' structures and electric properties |
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Chin. Phys. B
2010 Vol.19 (10): 107304-107304
[Abstract]
(1430)
[HTML 1 KB]
[PDF 532 KB]
(834)
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107207 |
M. A. Yeganeh,Sh. Rahmatallahpur, A. Nozad, and R. K. Mamedov |
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Effect of diode size and series resistance on barrier height and ideality factor in nearly ideal Au/n type-GaAs micro Schottky contact diodes |
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Chin. Phys. B
2010 Vol.19 (10): 107207-107207
[Abstract]
(1686)
[HTML 1 KB]
[PDF 3060 KB]
(1577)
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107101 |
Pu Hong-Bin(蒲红斌), Cao Lin(曹琳), Chen Zhi-Ming(陈治明), Ren Jie(仁杰), and Nan Ya-Gong(南雅公) |
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Modeling of 4H–SiC multi-floating-junction Schottky barrier diode |
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Chin. Phys. B
2010 Vol.19 (10): 107101-107101
[Abstract]
(1588)
[HTML 1 KB]
[PDF 280 KB]
(842)
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17203 |
Wang Shou-Guo(王守国), Zhang Yan(张岩), Zhang Yi-Men(张义门), and Zhang Yu-Ming(张玉明) |
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Characterization of ion-implanted 4H-SiC Schottky barrier diodes |
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Chin. Phys. B
2010 Vol.19 (1): 17203-017203
[Abstract]
(1383)
[HTML 1 KB]
[PDF 344 KB]
(962)
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3490 |
Zhang Lin(张林), Zhang Yi-Men(张义门), Zhang Yu-Ming(张玉明), Han Chao(韩超), and Ma Yong-Ji(马永吉) |
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High energy electron radiation effect on Ni/4H-SiC SBD and Ohmic contact |
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Chin. Phys. B
2009 Vol.18 (8): 3490-3494
[Abstract]
(1586)
[HTML 1 KB]
[PDF 1316 KB]
(1026)
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1931 |
Zhang Lin(张林), Zhang Yi-Men(张义门), Zhang Yu-Ming(张玉明), Han Chao(韩超), and Ma Yong-Ji(马永吉) |
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High energy electron radiation effect on Ni and Ti/4H-SiC Schottky barrier diode at room temperature |
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Chin. Phys. B
2009 Vol.18 (5): 1931-1934
[Abstract]
(1438)
[HTML 1 KB]
[PDF 287 KB]
(695)
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322 |
Wang Shou-Guo (王守国), Yang Lin-An (杨林安), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明), Zhang Zhi-Yong (张志勇), Yan Jun-Feng (闫军锋) |
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Fabrication and characteristics of lateral Ti/4H-SiC Schottky barrier diodes |
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Chin. Phys. B
2003 Vol.12 (3): 322-324
[Abstract]
(1307)
[HTML 1 KB]
[PDF 205 KB]
(527)
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